JPS583283A - サイリスタ - Google Patents

サイリスタ

Info

Publication number
JPS583283A
JPS583283A JP56101594A JP10159481A JPS583283A JP S583283 A JPS583283 A JP S583283A JP 56101594 A JP56101594 A JP 56101594A JP 10159481 A JP10159481 A JP 10159481A JP S583283 A JPS583283 A JP S583283A
Authority
JP
Japan
Prior art keywords
thyristor
layer
stage
electrode
pace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56101594A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136262B2 (en]
Inventor
Hiromichi Ohashi
弘通 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56101594A priority Critical patent/JPS583283A/ja
Priority to EP82105664A priority patent/EP0069308B1/en
Priority to DE8282105664T priority patent/DE3268107D1/de
Priority to CA000406096A priority patent/CA1175952A/en
Publication of JPS583283A publication Critical patent/JPS583283A/ja
Priority to US06/744,655 priority patent/US4649410A/en
Publication of JPH0136262B2 publication Critical patent/JPH0136262B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
JP56101594A 1981-06-30 1981-06-30 サイリスタ Granted JPS583283A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56101594A JPS583283A (ja) 1981-06-30 1981-06-30 サイリスタ
EP82105664A EP0069308B1 (en) 1981-06-30 1982-06-25 Thyristor
DE8282105664T DE3268107D1 (en) 1981-06-30 1982-06-25 Thyristor
CA000406096A CA1175952A (en) 1981-06-30 1982-06-28 Thyristor
US06/744,655 US4649410A (en) 1981-06-30 1985-06-14 Radiation controllable thyristor with multiple non-concentric amplified stages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101594A JPS583283A (ja) 1981-06-30 1981-06-30 サイリスタ

Publications (2)

Publication Number Publication Date
JPS583283A true JPS583283A (ja) 1983-01-10
JPH0136262B2 JPH0136262B2 (en]) 1989-07-31

Family

ID=14304702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101594A Granted JPS583283A (ja) 1981-06-30 1981-06-30 サイリスタ

Country Status (3)

Country Link
US (1) US4649410A (en])
JP (1) JPS583283A (en])
CA (1) CA1175952A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106170A (ja) * 1983-11-15 1985-06-11 Toshiba Corp 過電圧保護機能付サイリスタ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7020773B1 (en) * 2000-07-17 2006-03-28 Citrix Systems, Inc. Strong mutual authentication of devices
US6986040B1 (en) 2000-11-03 2006-01-10 Citrix Systems, Inc. System and method of exploiting the security of a secure communication channel to secure a non-secure communication channel
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
DE2356906A1 (de) * 1973-11-14 1975-05-22 Siemens Ag Thyristor
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
IT1087185B (it) * 1976-10-18 1985-05-31 Gen Electric Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt
CS208929B1 (en) * 1977-08-23 1981-10-30 Jaroslav Homola Multilayer semiconductor device
DE2739187C2 (de) * 1977-08-31 1981-10-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106170A (ja) * 1983-11-15 1985-06-11 Toshiba Corp 過電圧保護機能付サイリスタ

Also Published As

Publication number Publication date
JPH0136262B2 (en]) 1989-07-31
US4649410A (en) 1987-03-10
CA1175952A (en) 1984-10-09

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